Low-Temperature Sintering Bonding Using Silver Nanoparticle Paste for Electronics Packaging
نویسندگان
چکیده
منابع مشابه
Low-Temperature and Low-Pressure Cu–Cu Bonding by Highly Sinterable Cu Nanoparticle Paste
A reliable Cu-Cu bonding joint was achieved by using the highly sinterable Cu nanoparticle paste. Pure copper nanoparticles used in the preparation of nanoparticle paste were synthesized through simple routes, with an average size of 60.5 nm. Under an Ar-H2 gas mixture atmosphere, the Cu nanoparticle paste exhibited large areas of fusion after sintering at 300 °C and reached a low electrical re...
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Materials and processes are being developed for packaging of low and medium power, high temperature electronics (up to 500). Ceramic (Al2O3 and AlN) hermetic packages are being used. Die attach techniques based on patterned Au bumps, Au-Si and off-eutectic Au-Sn have been demonstrated. Au thermosonic wire bonding provides a monometallic interconnect system between the die and the package pads. ...
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AuSi, patterned Au and off-eutectic Sn-Au-Sn die attach materials and processes have been investigated for SiC die attach for high temperature applications. AuSi shear test results after 3000 hours of aging at 325C in air showed only a slight decrease in shear strength when assembled on Mo:Mn/Pd/Au metallized AlN. However, when assembled on Mo:Mn/Ni/Au metallized AlN, the die shear strength dec...
متن کاملStudy of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloy
Silver sintering joints and AuGe soldering are promising technologies for high temperature (>200 C ambient) power electronics packaging. This paper presents the implementation of two silver-sintering processes with the one hand micrometer-scale silver particles, and on the other hand nano-meter-scale particles. Two substrates technologies have been investigated: A12O3 DBC and Si3N4 AMB. After t...
متن کاملLow-Temperature Wafer Bonding for MEMS Hermetic Packaging Using Sub-micron Au Particles
The study of wafer level hermetic bonding using sub-micron gold particles with the mean diameter of 0.3_m was conducted at bonding temperature of 150 – 300 °C with varying bonding pressure in the range of 50 – 100 MPa. 4.5 mm-square, 10 μm – 100 μm-wide seal line patterns of sub-micron Au particles were formed on Si or glass wafers by means of wafer level processing using photolithography and s...
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2015
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2015/897142